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VS-20ETS08S-M3

fabricante:
Vishay General Semiconductor - Divisão de Diodos
Descrição:
DIODE GEN PURP 800V 20A TO263AB
Categoria:
Produtos de semicondutor discretos
Especificações
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 800 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 20 A
Package:
Tube
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
TO-263AB (D²PAK)
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-40°C ~ 150°C
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max):
800 V
Current - Average Rectified (Io):
20A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
20ETS08
Introdução
Diodo de 800 V 20A montado na superfície TO-263AB (D2PAK)
Envie o RFQ
Conservado em estoque:
MOQ: