FDMS0312AS
fabricante:
ONSEMI
Descrição:
MOSFET N-CH 30V 18A/22A 8PQFN
Categoria:
Produtos de semicondutor discretos
Especificações
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Embalagem / Caixa:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
31 nC @ 10 V
Rds On (Max) @ Id, Vgs:
5mOhm @ 18A, 10V
FET Type:
N-Channel
Tensão de accionamento (max Rds On, min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1815 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®, SyncFET™
Supplier Device Package:
8-PQFN (5x6)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
18A (Ta), 22A (Tc)
Power Dissipation (Max):
2.5W (Ta), 36W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS0312
Introdução
N-Canal 30 V 18A (Ta), 22A (Tc) 2,5W (Ta), 36W (Tc) Montar de superfície 8-PQFN (5x6)
Envie o RFQ
Conservado em estoque:
MOQ: