FDD13AN06A0
fabricante:
ONSEMI
Descrição:
MOSFET N-CH 60V 9.9A/50A DPAK
Categoria:
Produtos de semicondutor discretos
Especificações
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Característica do FET:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Temperatura de funcionamento:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
Rds On (Max) @ Id, Vgs:
13.5mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1350 pF @ 25 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-252AA
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
9.9A (Ta), 50A (Tc)
Power Dissipation (Max):
115W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDD13AN06
Introdução
N-Canal 60 V 9.9A (Ta), 50A (Tc) 115W (Tc) Montador de superfície TO-252AA
Envie o RFQ
Conservado em estoque:
MOQ: