FQPF11P06
fabricante:
ONSEMI
Descrição:
MOSFET P-CH 60V 8.6A TO220F
Categoria:
Produtos de semicondutor discretos
Especificações
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Rds On (Max) @ Id, Vgs:
175mOhm @ 4.3A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±25V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
550 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220F-3
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
8.6A (Tc)
Power Dissipation (Max):
30W (Tc)
Tecnologia:
MOSFET (óxido de metal)
Base Product Number:
FQPF11
Introdução
P-Canal 60 V 8.6A (Tc) 30W (Tc) através do buraco TO-220F-3
Envie o RFQ
Conservado em estoque:
MOQ: