IPA60R280P6
fabricante:
Tecnologias Infineon
Descrição:
600V, N-CHANNEL POWER MOSFET
Categoria:
Produtos de semicondutor discretos
Especificações
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
25.5 nC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
1190 pF @ 100 V
Series:
CoolMOS P6™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4.5V @ 430µA
Supplier Device Package:
PG-TO220-3-111
Rds On (Max) @ Id, Vgs:
280mOhm @ 5.2A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
32W (Tc)
Package / Case:
TO-220-3 Full Pack
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
13.8A (Tc)
Technology:
MOSFET (Metal Oxide)
Característica do FET:
-
Introdução
N-canal 600 V 13.8A (Tc) 32W (Tc) através do buraco PG-TO220-3-111
Envie o RFQ
Conservado em estoque:
MOQ: