IXFK32N100P

fabricante:
IXYS
Descrição:
MOSFET N-CH 1000V 32A a 264AA
Categoria:
Produtos de semicondutor discretos
Especificações
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
6.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Gate Charge (Qg) (Max) @ Vgs:
225 nC @ 10 V
Rds On (Max) @ Id, Vgs:
320mOhm @ 16A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
14200 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar
Supplier Device Package:
TO-264AA (IXFK)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
32A (Tc)
Power Dissipation (Max):
960W (Tc)
Tecnologia:
MOSFET (óxido de metal)
Base Product Number:
IXFK32
Introdução
N-canal 1000 V 32A (Tc) 960W (Tc) através do buraco TO-264AA (IXFK)
Envie o RFQ
Conservado em estoque:
MOQ: