IXTQ460P2
fabricante:
IXYS
Descrição:
MOSFET N-CH 500V 24A TO3P
Categoria:
Produtos de semicondutor discretos
Especificações
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
48 nC @ 10 V
Rds On (Max) @ Id, Vgs:
270mOhm @ 12A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Product Status:
Active
Capacidade de entrada (Ciss) (Max) @ Vds:
2890 pF @ 25 V
Mounting Type:
Through Hole
Série:
PolarP2TM
Supplier Device Package:
TO-3P
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Dissipação de poder (máxima):
480 W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTQ460
Introdução
N-canal 500 V 24A (Tc) 480W (Tc) através do buraco TO-3P
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| Imagem | parte # | Descrição | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
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IXFH20N80Q |
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IXFH26N50Q |
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IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
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|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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