IXTT16P60P
fabricante:
IXYS
Descrição:
MOSFET P-CH 600V 16A TO268
Categoria:
Produtos de semicondutor discretos
Especificações
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Gate Charge (Qg) (Max) @ Vgs:
92 nC @ 10 V
Rds On (Max) @ Id, Vgs:
720mOhm @ 500mA, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5120 pF @ 25 V
Mounting Type:
Surface Mount
Series:
PolarP™
Supplier Device Package:
TO-268AA
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Power Dissipation (Max):
460W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTT16
Introdução
P-Canal 600 V 16A (Tc) 460W (Tc) Montador de superfície TO-268AA
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