IXTT30N60L2
fabricante:
IXYS
Descrição:
MOSFET N-CH 600V 30A TO268
Categoria:
Produtos de semicondutor discretos
Especificações
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Gate Charge (Qg) (Max) @ Vgs:
335 nC @ 10 V
Rds On (Max) @ Id, Vgs:
240mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
10700 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Linear L2™
Supplier Device Package:
TO-268AA
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
540W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTT30
Introdução
N-Canal 600 V 30A (Tc) 540W (Tc) Montador de superfície TO-268AA
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| Imagem | parte # | Descrição | |
|---|---|---|---|
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|
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IXFH12N90 |
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IXFH13N50 |
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IXFN32N120P |
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IXFN32N100Q3 |
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|
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