IXFB100N50P
fabricante:
IXYS
Descrição:
MOSFET N-CH 500V 100A PLUS264
Categoria:
Produtos de semicondutor discretos
Especificações
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Característica do FET:
-
Vgs(th) (Max) @ Id:
5V @ 8mA
Temperatura de funcionamento:
-
Package / Case:
TO-264-3, TO-264AA
Carga da porta (Qg) (máximo) @ Vgs:
240 nC @ 10 V
Rds On (Max) @ Id, Vgs:
49mOhm @ 50A, 10V
Tipo de FET:
N-canal
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
20000 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar
Supplier Device Package:
PLUS264™
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Power Dissipation (Max):
1890W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFB100
Introdução
N-canal 500 V 100A (Tc) 1890W (Tc) através do buraco PLUS264TM
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| Imagem | parte # | Descrição | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
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|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
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|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
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|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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