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IXFN38N100P

fabricante:
IXYS
Descrição:
MOSFET N-CH 1000V 38A SOT-227B
Categoria:
Produtos de semicondutor discretos
Especificações
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
6.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Gate Charge (Qg) (Max) @ Vgs:
350 nC @ 10 V
Rds On (Max) @ Id, Vgs:
210mOhm @ 19A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
24000 pF @ 25 V
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Polar
Supplier Device Package:
SOT-227B
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
38A (Tc)
Power Dissipation (Max):
1000W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN38
Introdução
N-Channel 1000 V 38A (Tc) 1000W (Tc) Montador do chassi SOT-227B
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