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SIR426DP-T1-GE3

fabricante:
Vishay Siliconix
Descrição:
MOSFET N-CH 40V 30A PPAK SO-8
Categoria:
Produtos de semicondutor discretos
Especificações
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
31 nC @ 10 V
Rds On (Max) @ Id, Vgs:
10.5mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
40 V
Vgs (máximo):
± 20V
Product Status:
Active
Capacidade de entrada (Ciss) (Max) @ Vds:
1160 pF @ 20 V
Mounting Type:
Surface Mount
Série:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
4.8W (Ta), 41.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIR426
Introdução
N-Canal 40 V 30A (Tc) 4,8W (Ta), 41,7W (Tc) PowerPAK® SO-8
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