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SQJA62EP-T1_GE3

fabricante:
Vishay Siliconix
Descrição:
MOSFET N-CH 60V 60A PPAK SO-8
Categoria:
Produtos de semicondutor discretos
Especificações
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Embalagem / Caixa:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
85 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 10A, 10V
FET Type:
N-Channel
Tensão de accionamento (max Rds On, min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5100 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Power Dissipation (Max):
68W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQJA62
Introdução
N-Channel 60 V 60A (Tc) 68W (Tc) PowerPAK® SO-8
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Conservado em estoque:
MOQ: